NTHL1000N170M1 onsemi
Hersteller: onsemiMOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.73 EUR |
| 10+ | 6.48 EUR |
| 25+ | 6.12 EUR |
| 100+ | 5.26 EUR |
| 250+ | 4.96 EUR |
| 450+ | 4.65 EUR |
| 900+ | 3.98 EUR |
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Technische Details NTHL1000N170M1 onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V, Power Dissipation (Max): 48W, Vgs(th) (Max) @ Id: 4.3V @ 640µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V.
Weitere Produktangebote NTHL1000N170M1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NTHL1000N170M1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.7KV 4.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL1000N170M1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.7KV 4.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL1000N170M1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.7KV 4.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL1000N170M1 | Hersteller : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET EL Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V Power Dissipation (Max): 48W Vgs(th) (Max) @ Id: 4.3V @ 640µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V |
Produkt ist nicht verfügbar |