NTHL110N65S3F onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.47 EUR |
| 30+ | 6.76 EUR |
| 120+ | 6.27 EUR |
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Technische Details NTHL110N65S3F onsemi
Description: MOSFET N-CH 650V 30A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V.
Weitere Produktangebote NTHL110N65S3F nach Preis ab 6.48 EUR bis 11.99 EUR
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NTHL110N65S3F | Hersteller : onsemi |
MOSFET SUPERFET3 650V |
auf Bestellung 10770 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL110N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-247 Tube |
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NTHL110N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-247 Tube |
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NTHL110N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-247 Tube |
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| NTHL110N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.5A Pulsed drain current: 69A Power dissipation: 240W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
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| NTHL110N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.5A Pulsed drain current: 69A Power dissipation: 240W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |