NTHL160N120SC1 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.95 EUR |
| 19+ | 9.57 EUR |
| 25+ | 8.1 EUR |
| 100+ | 7.7 EUR |
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Technische Details NTHL160N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 17A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V.
Weitere Produktangebote NTHL160N120SC1 nach Preis ab 7.79 EUR bis 18.2 EUR
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NTHL160N120SC1 | ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 17A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL160N120SC1 | onsemi |
SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL160N120SC1 | ONN |
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auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTHL160N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.95 EUR |
| 19+ | 9.37 EUR |
| 25+ | 7.79 EUR |
| NTHL160N120SC1 |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.16 EUR |
| 30+ | 10.7 EUR |
| 120+ | 9.06 EUR |
| NTHL160N120SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V
SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.2 EUR |
| 10+ | 10.83 EUR |
| 120+ | 9.15 EUR |
| 1020+ | 8.9 EUR |
| NTHL160N120SC1 |
|
Hersteller: ONN
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)