NTHL160N120SC1 ON Semiconductor
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 8.92 EUR |
| 19+ | 8.36 EUR |
| 25+ | 6.97 EUR |
| 100+ | 6.53 EUR |
| 250+ | 6.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTHL160N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 17A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V.
Weitere Produktangebote NTHL160N120SC1 nach Preis ab 6.97 EUR bis 13.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NTHL160N120SC1 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
NTHL160N120SC1 | Hersteller : onsemi |
MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L |
auf Bestellung 1618 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
NTHL160N120SC1 | Hersteller : onsemi |
Description: SICFET N-CH 1200V 17A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
auf Bestellung 365 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
NTHL160N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 1.2KV 17A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
NTHL160N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
NTHL160N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 69A Power dissipation: 59W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 0.16Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
NTHL160N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 69A Power dissipation: 59W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 0.16Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |