NTHS4101PT1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
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Technische Details NTHS4101PT1G onsemi
Description: MOSFET P-CH 20V 4.8A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj), Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: ChipFET™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V.
Weitere Produktangebote NTHS4101PT1G nach Preis ab 0.67 EUR bis 2.57 EUR
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NTHS4101PT1G | onsemi |
MOSFETs -20V -6.7A P-Channel |
auf Bestellung 8107 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHS4101PT1G | onsemi |
Description: MOSFET P-CH 20V 4.8A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj) Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V |
auf Bestellung 7781 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHS4101PT1G |
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Hersteller: onsemi
MOSFETs -20V -6.7A P-Channel
MOSFETs -20V -6.7A P-Channel
auf Bestellung 8107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.49 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.67 EUR |
| NTHS4101PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
auf Bestellung 7781 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 11+ | 1.63 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.78 EUR |