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NTHS4166NT1G

NTHS4166NT1G onsemi

nths4166n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
16+ 1.14 EUR
100+ 0.89 EUR
Mindestbestellmenge: 13
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Technische Details NTHS4166NT1G onsemi

Description: MOSFET N-CH 30V 4.9A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V.

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NTHS4166NT1G NTHS4166NT1G Hersteller : onsemi NTHS4166N_D-1813953.pdf MOSFET CHPFT SNGL 30V 8.2A NFET
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.54 EUR
10+ 1.39 EUR
100+ 1.08 EUR
500+ 0.89 EUR
1000+ 0.71 EUR
3000+ 0.66 EUR
6000+ 0.62 EUR
Mindestbestellmenge: 2
NTHS4166NT1G Hersteller : ON nths4166n-d.pdf SOT26/SOT363
auf Bestellung 1030 Stücke:
Lieferzeit 21-28 Tag (e)
NTHS4166NT1G Hersteller : ON Semiconductor nths4166n-d.pdf
auf Bestellung 3960 Stücke:
Lieferzeit 21-28 Tag (e)
NTHS4166NT1G NTHS4166NT1G Hersteller : onsemi nths4166n-d.pdf Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
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