auf Bestellung 3549 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.92 EUR |
| 3000+ | 0.85 EUR |
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Technische Details NTHS5404T1G onsemi
Description: MOSFET N-CH 20V 5.2A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V.
Weitere Produktangebote NTHS5404T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTHS5404T1G | Hersteller : ON Semiconductor |
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auf Bestellung 8133 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHS5404T1G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 5.2A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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NTHS5404T1G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 5.2A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
Produkt ist nicht verfügbar |