NTHS5445T1 onsemi
Hersteller: onsemiDescription: MOSFET P-CH 8V 5.2A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1480+ | 0.33 EUR |
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Technische Details NTHS5445T1 onsemi
Description: MOSFET P-CH 8V 5.2A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V.
Weitere Produktangebote NTHS5445T1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTHS5445T1 |
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auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHS5445T1 | Hersteller : ONSEMI |
Description: ONSEMI - NTHS5445T1 - NTHS5445T1, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHS5445T1 | Hersteller : onsemi |
Description: MOSFET P-CH 8V 5.2A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
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