Produkte > ONSEMI > NTJD4105CT4G

NTJD4105CT4G onsemi


ntjd4105c-d.pdf
Hersteller: onsemi
Description: MOSFET N/P-CH 20V/8V 0.63A SC88
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTJD4105CT4G onsemi

Description: MOSFET N/P-CH 20V/8V 0.63A SC88, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Supplier Device Package: SC-88/SC70-6/SOT-363, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA, Drain to Source Voltage (Vdss): 20V, 8V, Power - Max: 270mW.