NTJD4152PT1G onsemi
Hersteller: onsemiDescription: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.28 EUR |
| 30000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTJD4152PT1G onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 272mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 880mA, Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V, Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363.
Weitere Produktangebote NTJD4152PT1G nach Preis ab 0.26 EUR bis 1.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NTJD4152PT1G | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 0.88A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
auf Bestellung 38385 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
NTJD4152PT1G | Hersteller : onsemi |
MOSFET 20V 0.88mA P-Channel ESD Protection |
auf Bestellung 272101 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
NTJD4152PT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTJD4152PT1G - Dual-MOSFET, p-Kanal, 20 V, 880 mA, 0.215 ohm, SOT-363, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 880 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 272 Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Produktpalette: - Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.215 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.2 SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 4805 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
NTJD4152PT1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R |
auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |