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NTJD4152PT1G onsemi


ntjd4152p-d.pdf
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 63000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTJD4152PT1G onsemi

Description: MOSFET 2P-CH 20V 0.88A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 272mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 880mA, Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V, Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363.

Weitere Produktangebote NTJD4152PT1G nach Preis ab 0.17 EUR bis 0.8 EUR

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NTJD4152PT1G NTJD4152PT1G onsemi ntjd4152p-d.pdf Description: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 65346 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTJD4152PT1G NTJD4152PT1G onsemi NTJD4152P_D-2318799.pdf MOSFETs 20V 0.88mA P-Channel ESD Protection
auf Bestellung 27178 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.8 EUR
10+0.62 EUR
100+0.35 EUR
1000+0.24 EUR
3000+0.21 EUR
9000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTJD4152PT1G ntjd4152p-d.pdf
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 65346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTJD4152PT1G NTJD4152P_D-2318799.pdf
Hersteller: onsemi
MOSFETs 20V 0.88mA P-Channel ESD Protection
auf Bestellung 27178 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.8 EUR
10+0.62 EUR
100+0.35 EUR
1000+0.24 EUR
3000+0.21 EUR
9000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH