NTJD4401NT1G ONSEMI
Hersteller: ONSEMICategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 445mΩ
Version: ESD
Gate charge: 1.3nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.46A
auf Bestellung 4650 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 208+ | 0.34 EUR |
| 350+ | 0.2 EUR |
| 521+ | 0.14 EUR |
| 550+ | 0.13 EUR |
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Technische Details NTJD4401NT1G ONSEMI
Description: ONSEMI - NTJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 630 mA, 0.29 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 630mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 270mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote NTJD4401NT1G nach Preis ab 0.13 EUR bis 0.7 EUR
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NTJD4401NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 445mΩ Version: ESD Gate charge: 1.3nC Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 0.46A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4650 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD4401NT1G | Hersteller : onsemi |
MOSFET 20V Dual N-Channel ESD Protection |
auf Bestellung 19133 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4401NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 630 mA, 0.29 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 630mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 270mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1994 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
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NTJD4401NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |