NTJS3151PT1G onsemi

Description: MOSFET P-CH 12V 2.7A SC88/SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Vgs(th) (Max) @ Id: 1.2V @ 100µA, Power Dissipation (Max): 625mW (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), FET Type: P-Channel.