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NTJS4151PT1G

NTJS4151PT1G ONSEMI

ntjs4151p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
160+0.44 EUR
Mindestbestellmenge: 160
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTJS4151PT1G ONSEMI

Description: MOSFET P-CH 20V 3.3A SC88/SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V.

Weitere Produktangebote NTJS4151PT1G nach Preis ab 0.14 EUR bis 0.79 EUR

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NTJS4151PT1G NTJS4151PT1G Hersteller : onsemi NTJS4151P_D-2318568.pdf MOSFETs -20V -4.2A P-Channel
auf Bestellung 97457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.43 EUR
100+0.2 EUR
1000+0.18 EUR
3000+0.16 EUR
9000+0.14 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NTJS4151PT1G NTJS4151PT1G Hersteller : onsemi ntjs4151p-d.pdf Description: MOSFET P-CH 20V 3.3A SC88/SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
auf Bestellung 1382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
36+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NTJS4151PT1G NTJS4151PT1G Hersteller : onsemi ntjs4151p-d.pdf Description: MOSFET P-CH 20V 3.3A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH