
NTJS4160NT1G onsemi

Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 637216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4121+ | 0.12 EUR |
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Technische Details NTJS4160NT1G onsemi
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V.
Weitere Produktangebote NTJS4160NT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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NTJS4160NT1G | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 637216 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS4160NT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTJS4160NT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
Produkt ist nicht verfügbar |
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NTJS4160NT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
Produkt ist nicht verfügbar |