NTK3139PT1G onsemi
Hersteller: onsemiDescription: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
auf Bestellung 75882 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.17 EUR |
| 8000+ | 0.16 EUR |
| 12000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTK3139PT1G onsemi
Description: MOSFET P-CH 20V 660MA SOT723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 660mA (Ta), Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V, Power Dissipation (Max): 310mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-723, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V.
Weitere Produktangebote NTK3139PT1G nach Preis ab 0.13 EUR bis 0.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTK3139PT1G | Hersteller : onsemi |
MOSFET 20V/6V P CH T1 780mA 0.4 |
auf Bestellung 518363 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NTK3139PT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 660MA SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V |
auf Bestellung 75882 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NTK3139PT1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 0.78A 3-Pin SOT-723 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
NTK3139PT1G Produktcode: 172766 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
 |
NTK3139PT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.45W Polarisation: unipolar Drain current: -0.57A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Case: SOT723 On-state resistance: 2.2Ω Gate-source voltage: ±6V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
NTK3139PT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.45W Polarisation: unipolar Drain current: -0.57A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Case: SOT723 On-state resistance: 2.2Ω Gate-source voltage: ±6V |
Produkt ist nicht verfügbar |