Produkte > ONSEMI > NTLGF3501NT2G
NTLGF3501NT2G

NTLGF3501NT2G onsemi


NTLGF3501N-D.pdf Hersteller: onsemi
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
auf Bestellung 123000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
666+0.75 EUR
Mindestbestellmenge: 666
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTLGF3501NT2G onsemi

Description: MOSFET N-CH 20V 2.8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-DFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V.

Weitere Produktangebote NTLGF3501NT2G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTLGF3501NT2G NTLGF3501NT2G Hersteller : ON Semiconductor NTLGD3502N-D-115541.pdf MOSFET NFET 3X3 20V 3.0A 9MOHM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTLGF3501NT2G NTLGF3501N-D.pdf
auf Bestellung 112 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTLGF3501NT2G NTLGF3501NT2G Hersteller : onsemi NTLGF3501N-D.pdf Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH