NTLGF3501NT2G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
auf Bestellung 123000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 666+ | 0.75 EUR |
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Technische Details NTLGF3501NT2G onsemi
Description: MOSFET N-CH 20V 2.8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-DFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V.
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NTLGF3501NT2G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 2.8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V |
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