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NTLJD3115PT1G

NTLJD3115PT1G onsemi

ntljd3115p-d.pdf Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 96000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
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Technische Details NTLJD3115PT1G onsemi

Description: MOSFET 2P-CH 20V 2.3A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 710mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2).

Weitere Produktangebote NTLJD3115PT1G nach Preis ab 0.55 EUR bis 1.56 EUR

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NTLJD3115PT1G NTLJD3115PT1G Hersteller : onsemi NTLJD3115P_D-2318569.pdf MOSFET PFET 2X2 20V 4.1A 106MOHM
auf Bestellung 6728 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
39+1.35 EUR
44+ 1.19 EUR
100+ 0.84 EUR
500+ 0.78 EUR
1000+ 0.68 EUR
3000+ 0.58 EUR
6000+ 0.55 EUR
Mindestbestellmenge: 39
NTLJD3115PT1G NTLJD3115PT1G Hersteller : onsemi ntljd3115p-d.pdf Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 101592 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.78 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
NTLJD3115PT1G Hersteller : ON Semiconductor ntljd3115p-d.pdf
auf Bestellung 1010 Stücke:
Lieferzeit 21-28 Tag (e)
NTLJD3115PT1G NTLJD3115PT1G Hersteller : ON Semiconductor ntljd3115p-d.pdf Trans MOSFET P-CH 20V 3.3A 6-Pin WDFN EP T/R
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