NTLJD3115PT1G onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
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Technische Details NTLJD3115PT1G onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 710mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2).
Weitere Produktangebote NTLJD3115PT1G nach Preis ab 0.34 EUR bis 1.62 EUR
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NTLJD3115PT1G | onsemi |
MOSFETs PFET 2X2 20V 4.1A 106MOHM |
auf Bestellung 4360 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJD3115PT1G | onsemi |
Description: MOSFET 2P-CH 20V 2.3A 6WDFN Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.3A Drain to Source Voltage (Vdss): 20V Power - Max: 710mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate |
auf Bestellung 5010 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTLJD3115PT1G | ON Semiconductor |
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auf Bestellung 1010 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTLJD3115PT1G |
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Hersteller: onsemi
MOSFETs PFET 2X2 20V 4.1A 106MOHM
MOSFETs PFET 2X2 20V 4.1A 106MOHM
auf Bestellung 4360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.17 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.36 EUR |
| 9000+ | 0.34 EUR |
| NTLJD3115PT1G |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
auf Bestellung 5010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| NTLJD3115PT1G |
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Hersteller: ON Semiconductor
auf Bestellung 1010 Stücke:
Lieferzeit 21-28 Tag (e)