NTLJD3119CTBG ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.51 EUR |
| 6000+ | 0.46 EUR |
| 15000+ | 0.44 EUR |
Produktrezensionen
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Technische Details NTLJD3119CTBG ON Semiconductor
Description: ONSEMI - NTLJD3119CTBG - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 4.6 A, 4.6 A, 0.037 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 4.6A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm, Verlustleistung, p-Kanal: 2.3W, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: WDFN, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 2.3W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote NTLJD3119CTBG nach Preis ab 0.4 EUR bis 2.68 EUR
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NTLJD3119CTBG | ON Semiconductor |
 Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTLJD3119CTBG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJD3119CTBG | ON Semiconductor |
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTLJD3119CTBG | onsemi |
MOSFETs COMP 2X2 20V 3.8A 100mOhm |
auf Bestellung 23553 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJD3119CTBG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
auf Bestellung 12953 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJD3119CTBG | ONSEMI |
Description: ONSEMI - NTLJD3119CTBG - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 4.6 A, 4.6 A, 0.037 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 4.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm Verlustleistung, p-Kanal: 2.3W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: WDFN Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2.3W Betriebstemperatur, max.: 150°C |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTLJD3119CTBG |
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Hersteller: ON Semiconductor
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.54 EUR |
| 6000+ | 0.48 EUR |
| 15000+ | 0.44 EUR |
| NTLJD3119CTBG |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.58 EUR |
| 6000+ | 0.54 EUR |
| NTLJD3119CTBG |
|
Hersteller: ON Semiconductor
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 181+ | 0.96 EUR |
| 197+ | 0.86 EUR |
| 254+ | 0.64 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.4 EUR |
| NTLJD3119CTBG |
|
Hersteller: onsemi
MOSFETs COMP 2X2 20V 3.8A 100mOhm
MOSFETs COMP 2X2 20V 3.8A 100mOhm
auf Bestellung 23553 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.31 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.6 EUR |
| 3000+ | 0.56 EUR |
| NTLJD3119CTBG |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
auf Bestellung 12953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 14+ | 1.54 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| NTLJD3119CTBG |
|
Hersteller: ONSEMI
Description: ONSEMI - NTLJD3119CTBG - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 4.6 A, 4.6 A, 0.037 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 4.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm
Verlustleistung, p-Kanal: 2.3W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WDFN
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2.3W
Betriebstemperatur, max.: 150°C
Description: ONSEMI - NTLJD3119CTBG - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 4.6 A, 4.6 A, 0.037 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 4.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm
Verlustleistung, p-Kanal: 2.3W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WDFN
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2.3W
Betriebstemperatur, max.: 150°C
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 94+ | 2.68 EUR |