NTLJD4116NT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.47 EUR |
| 6000+ | 0.43 EUR |
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Technische Details NTLJD4116NT1G onsemi
Description: MOSFET 2N-CH 30V 2.5A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 710mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2).
Weitere Produktangebote NTLJD4116NT1G nach Preis ab 0.48 EUR bis 1.97 EUR
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NTLJD4116NT1G | onsemi |
MOSFETs NFET 2X2 30V 4.6A 70MOHM |
auf Bestellung 7845 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJD4116NT1G | onsemi |
Description: MOSFET 2N-CH 30V 2.5A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
auf Bestellung 6801 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTLJD4116NT1G |
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auf Bestellung 28750 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTLJD4116NT1G |
|
Hersteller: onsemi
MOSFETs NFET 2X2 30V 4.6A 70MOHM
MOSFETs NFET 2X2 30V 4.6A 70MOHM
auf Bestellung 7845 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.11 EUR |
| 10+ | 0.97 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
| NTLJD4116NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2N-CH 30V 2.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
auf Bestellung 6801 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 1.97 EUR |
| 15+ | 1.24 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| NTLJD4116NT1G |
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auf Bestellung 28750 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH