auf Bestellung 7845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.11 EUR |
| 10+ | 0.97 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTLJD4116NT1G onsemi
Description: MOSFET 2N-CH 30V 2.5A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 710mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2).
Weitere Produktangebote NTLJD4116NT1G nach Preis ab 0.5 EUR bis 1.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTLJD4116NT1G | Hersteller : onsemi |
 Description: MOSFET 2N-CH 30V 2.5A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
auf Bestellung 1449 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| NTLJD4116NT1G |
|
auf Bestellung 28750 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||
 |
NTLJD4116NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 3.7A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| NTLJD4116NT1G | Hersteller : ONSEMI |
NTLJD4116NT1G SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
NTLJD4116NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 2.5A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
Produkt ist nicht verfügbar |