auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.27 EUR |
Produktrezensionen
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Technische Details NTLJF4156NTAG onsemi
Description: MOSFET N-CH 30V 2.5A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj), Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 710mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V.
Weitere Produktangebote NTLJF4156NTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTLJF4156NTAG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 3.7A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NTLJF4156NTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 3.7A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| NTLJF4156NTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 4.6A; Idm: 20A On-state resistance: 70mΩ Type of transistor: N-MOSFET + Schottky Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Case: WDFN6 Drain-source voltage: 30V Drain current: 4.6A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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NTLJF4156NTAG | Hersteller : onsemi |
Description: MOSFET N-CH 30V 2.5A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTLJF4156NTAG | Hersteller : onsemi |
Description: MOSFET N-CH 30V 2.5A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V |
Produkt ist nicht verfügbar |
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| NTLJF4156NTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 4.6A; Idm: 20A On-state resistance: 70mΩ Type of transistor: N-MOSFET + Schottky Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Case: WDFN6 Drain-source voltage: 30V Drain current: 4.6A |
Produkt ist nicht verfügbar |