NTLJS3D0N02P8ZTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
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Technische Details NTLJS3D0N02P8ZTAG onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN, Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V.
Weitere Produktangebote NTLJS3D0N02P8ZTAG nach Preis ab 0.54 EUR bis 2.11 EUR
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NTLJS3D0N02P8ZTAG | onsemi |
Description: MOSFET N-CH 20V 12.1A 6PQFN Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 7088 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJS3D0N02P8ZTAG | onsemi |
MOSFETs PT8 20V WDFN POWER CLIP |
auf Bestellung 15858 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTLJS3D0N02P8ZTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 7088 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 16+ | 1.11 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.6 EUR |
| NTLJS3D0N02P8ZTAG |
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Hersteller: onsemi
MOSFETs PT8 20V WDFN POWER CLIP
MOSFETs PT8 20V WDFN POWER CLIP
auf Bestellung 15858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.42 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.6 EUR |
| 3000+ | 0.55 EUR |
| 6000+ | 0.54 EUR |