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NTLJS4114NTAG

NTLJS4114NTAG onsemi

ntljs4114n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.61 EUR
Mindestbestellmenge: 3000
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Technische Details NTLJS4114NTAG onsemi

Description: MOSFET N-CH 30V 3.6A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V.

Weitere Produktangebote NTLJS4114NTAG nach Preis ab 0.54 EUR bis 1.61 EUR

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NTLJS4114NTAG NTLJS4114NTAG Hersteller : onsemi NTLJS4114N_D-2318657.pdf MOSFET NFET WDFN6 30V 7.8A
auf Bestellung 4816 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
34+1.57 EUR
39+ 1.37 EUR
100+ 0.95 EUR
500+ 0.79 EUR
1000+ 0.67 EUR
3000+ 0.54 EUR
Mindestbestellmenge: 34
NTLJS4114NTAG NTLJS4114NTAG Hersteller : onsemi ntljs4114n-d.pdf Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 5070 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.61 EUR
19+ 1.39 EUR
100+ 0.96 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 17
NTLJS4114NTAG NTLJS4114NTAG Hersteller : ON Semiconductor ntljs4114n-d.pdf Trans MOSFET N-CH 30V 6A 6-Pin WDFN T/R
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