NTLUD3A50PZTAG onsemi
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.25 EUR |
| 100+ | 1.11 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.8 EUR |
| 9000+ | 0.76 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Produktbewertung abgeben
Technische Details NTLUD3A50PZTAG onsemi
Description: MOSFET 2P-CH 20V 2.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.8A, Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-UDFN (2x2).
Weitere Produktangebote NTLUD3A50PZTAG nach Preis ab 1.13 EUR bis 2.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NTLUD3A50PZTAG | onsemi |
 Description: MOSFET 2P-CH 20V 2.8A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (2x2) |
auf Bestellung 269 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTLUD3A50PZTAG |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 13+ | 1.7 EUR |
| 50+ | 1.27 EUR |
| 100+ | 1.13 EUR |