Technische Details NTLUD4C26NTAG onsemi
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6, On-state resistance: 21mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 1.7W, Polarisation: unipolar, Kind of package: reel; tape, Kind of channel: enhancement, Gate-source voltage: ±12V, Mounting: SMD, Case: uDFN6, Drain-source voltage: 30V, Drain current: 5.3A, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote NTLUD4C26NTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTLUD4C26NTAG | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6 On-state resistance: 21mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: uDFN6 Drain-source voltage: 30V Drain current: 5.3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NTLUD4C26NTAG | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6 On-state resistance: 21mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: uDFN6 Drain-source voltage: 30V Drain current: 5.3A |
Produkt ist nicht verfügbar |