NTLUS3A18PZCTBG onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details NTLUS3A18PZCTBG onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 6-UDFN (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).