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NTLUS3A18PZTAG

NTLUS3A18PZTAG onsemi

ntlus3a18pz-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.93 EUR
Mindestbestellmenge: 17
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Technische Details NTLUS3A18PZTAG onsemi

Description: MOSFET P-CH 20V 5.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-UDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V.

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NTLUS3A18PZTAG NTLUS3A18PZTAG Hersteller : ON Semiconductor NTLUS3A18PZ_D-1814047.pdf MOSFET T4S PCH 20/8V IN 2X2 UDFN
auf Bestellung 723 Stücke:
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NTLUS3A18PZTAG Hersteller : ON Semiconductor ntlus3a18pz-d.pdf
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Lieferzeit 21-28 Tag (e)
NTLUS3A18PZTAG NTLUS3A18PZTAG Hersteller : onsemi ntlus3a18pz-d.pdf Description: MOSFET P-CH 20V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
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