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NTMC083NP10M5L

NTMC083NP10M5L onsemi

ntmc083np10m5l-d.pdf Hersteller: onsemi
Description: MOSFET N/P-CH 100V 2.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 222pF @ 50V, 525pF @ 50V
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 8.4nC @ 10V
Supplier Device Package: 8-SOIC
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.65 EUR
5000+0.61 EUR
7500+0.59 EUR
12500+0.57 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMC083NP10M5L onsemi

Description: MOSFET N/P-CH 100V 2.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W (Ta), 3.1W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 222pF @ 50V, 525pF @ 50V, Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 8.4nC @ 10V, Supplier Device Package: 8-SOIC.

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NTMC083NP10M5L NTMC083NP10M5L Hersteller : onsemi ntmc083np10m5l-d.pdf Description: MOSFET N/P-CH 100V 2.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 222pF @ 50V, 525pF @ 50V
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 8.4nC @ 10V
Supplier Device Package: 8-SOIC
auf Bestellung 13898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
13+1.36 EUR
25+1.29 EUR
100+0.99 EUR
250+0.88 EUR
500+0.83 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
NTMC083NP10M5L Hersteller : onsemi ntmc083np10m5l-d.pdf MOSFETs MOSFET - Power, Dual N- & P-Channel, SO8
auf Bestellung 56832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1.22 EUR
100+0.92 EUR
500+0.84 EUR
1000+0.73 EUR
2500+0.64 EUR
5000+0.63 EUR
Mindestbestellmenge: 2
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NTMC083NP10M5L Hersteller : ONSEMI ntmc083np10m5l-d.pdf NTMC083NP10M5L Multi channel transistors
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