NTMD4N03R2G onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 30V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.51 EUR |
| 5000+ | 0.47 EUR |
| 7500+ | 0.45 EUR |
| 12500+ | 0.42 EUR |
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Technische Details NTMD4N03R2G onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NTMD4N03R2G nach Preis ab 0.4 EUR bis 1.95 EUR
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NTMD4N03R2G | Hersteller : onsemi |
MOSFETs 30V 4A N-Channel |
auf Bestellung 20444 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMD4N03R2G | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 30588 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMD4N03R2G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 4A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMD4N03R2G | Hersteller : ON |
06+ SOIC |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTMD4N03R2G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 12A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTMD4N03R2G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 12A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |