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NTMD6N02R2G

NTMD6N02R2G onsemi

ntmd6n02r2-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.92A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Drain to Source Voltage (Vdss): 20V
Power - Max: 730mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.52 EUR
5000+0.5 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMD6N02R2G onsemi

Description: MOSFET 2N-CH 20V 3.92A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V, Current - Continuous Drain (Id) @ 25°C: 3.92A, Drain to Source Voltage (Vdss): 20V, Power - Max: 730mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote NTMD6N02R2G nach Preis ab 0.5 EUR bis 1.39 EUR

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NTMD6N02R2G NTMD6N02R2G onsemi ntmd6n02r2-d.pdf Description: MOSFET 2N-CH 20V 3.92A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Drain to Source Voltage (Vdss): 20V
Power - Max: 730mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 9768 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+1.2 EUR
100+0.83 EUR
500+0.69 EUR
1000+0.59 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
NTMD6N02R2G NTMD6N02R2G onsemi NTMD6N02R2_D-2319023.pdf MOSFETs NFET 20V 0.035R TR
auf Bestellung 7421 Stücke:
Lieferzeit 143-147 Tag (e)
3+1.39 EUR
10+1.2 EUR
100+0.83 EUR
500+0.7 EUR
1000+0.59 EUR
2500+0.53 EUR
5000+0.5 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NTMD6N02R2G ntmd6n02r2-d.pdf
NTMD6N02R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.92A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Drain to Source Voltage (Vdss): 20V
Power - Max: 730mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 9768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
15+1.2 EUR
100+0.83 EUR
500+0.69 EUR
1000+0.59 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
NTMD6N02R2G NTMD6N02R2_D-2319023.pdf
NTMD6N02R2G
Hersteller: onsemi
MOSFETs NFET 20V 0.035R TR
auf Bestellung 7421 Stücke:
Lieferzeit 143-147 Tag (e)
Anzahl Preis
3+1.39 EUR
10+1.2 EUR
100+0.83 EUR
500+0.7 EUR
1000+0.59 EUR
2500+0.53 EUR
5000+0.5 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH