NTMD6N02R2G onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 20V 3.92A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.78 EUR |
| 5000+ | 0.73 EUR |
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Technische Details NTMD6N02R2G onsemi
Description: MOSFET 2N-CH 20V 3.92A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 730mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.92A, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote NTMD6N02R2G nach Preis ab 0.87 EUR bis 2.34 EUR
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NTMD6N02R2G | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 3.92A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.92A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 9768 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMD6N02R2G | Hersteller : onsemi |
MOSFET NFET 20V 0.035R TR |
auf Bestellung 5956 Stücke: Lieferzeit 14-28 Tag (e) |
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NTMD6N02R2G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTMD6N02R2G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |