| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.02 EUR |
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Technische Details NTMD6N02R2G onsemi
Description: MOSFET 2N-CH 20V 3.92A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 730mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.92A, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote NTMD6N02R2G nach Preis ab 0.81 EUR bis 2.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NTMD6N02R2G | onsemi |
 Description: MOSFET 2N-CH 20V 3.92A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.92A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1097 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMD6N02R2G | ON Semiconductor |
Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMD6N02R2G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.92A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 3.92A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.49 EUR |
| 14+ | 1.57 EUR |
| 50+ | 1.17 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.81 EUR |
| NTMD6N02R2G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)