auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.99 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.88 EUR |
| 2500+ | 0.83 EUR |
| 5000+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMD6P02R2G onsemi
Description: MOSFET 2P-CH 20V 4.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 750mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V, Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NTMD6P02R2G nach Preis ab 0.94 EUR bis 3.06 EUR
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NTMD6P02R2G | Hersteller : onsemi |
 Description: MOSFET 2P-CH 20V 4.8A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 1128 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMD6P02R2G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 6.2A 8-Pin SOIC N T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMD6P02R2G | Hersteller : ON-Semicoductor |
Transistor 2xP-Channel MOSFET; 20V; 12V; 50mOhm; 6,2A; 1,28W; -55°C ~ 150°C; NTMD6P02R2G TNTMD6p02 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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NTMD6P02R2G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: -20V Drain current: -5.7A On-state resistance: 33mΩ Power dissipation: 2W Gate-source voltage: ±12V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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NTMD6P02R2G | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 4.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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NTMD6P02R2G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: -20V Drain current: -5.7A On-state resistance: 33mΩ Power dissipation: 2W Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |