| Anzahl | Preis |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 1.72 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.99 EUR |
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Technische Details NTMD6P02R2G onsemi
Description: MOSFET 2P-CH 20V 4.8A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V, Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V, Current - Continuous Drain (Id) @ 25°C: 4.8A, Drain to Source Voltage (Vdss): 20V, Power - Max: 750mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMD6P02R2G nach Preis ab 0.85 EUR bis 2.75 EUR
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NTMD6P02R2G | Hersteller : onsemi |
 Description: MOSFET 2P-CH 20V 4.8A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V Current - Continuous Drain (Id) @ 25°C: 4.8A Drain to Source Voltage (Vdss): 20V Power - Max: 750mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2232 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMD6P02R2G | Hersteller : ON-Semiconductor |
Transistor 2xP-Channel MOSFET; 20V; 12V; 50mOhm; 6,2A; 1,28W; -55°C ~ 150°C; NTMD6P02R2G TNTMD6p02 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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