Produkte > ONSEMI > NTMFD024N06CT1G
NTMFD024N06CT1G

NTMFD024N06CT1G onsemi


NTMFD024N06C-D.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 10500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.63 EUR
3000+0.58 EUR
4500+0.55 EUR
7500+0.52 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTMFD024N06CT1G onsemi

Description: MOSFET 2N-CH 60V 8A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 28W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V, Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual).

Weitere Produktangebote NTMFD024N06CT1G nach Preis ab 0.73 EUR bis 2.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTMFD024N06CT1G NTMFD024N06CT1G Hersteller : onsemi NTMFD024N06C-D.pdf Description: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 11980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.40 EUR
100+0.93 EUR
500+0.73 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NTMFD024N06CT1G Hersteller : onsemi onsm_s_a0009688785_1-2280056.pdf MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH