NTMFD0D9N02P1E onsemi
Hersteller: onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Power - Max: 960mW (Ta), 1.04W (Ta)
Technology: MOSFET (Metal Oxide)
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFD0D9N02P1E onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V, Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta), Drain to Source Voltage (Vdss): 30V, 25V, Power - Max: 960mW (Ta), 1.04W (Ta), Technology: MOSFET (Metal Oxide).