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NTMFD1D4N02P1E

NTMFD1D4N02P1E onsemi

ntmfd1d4n02p1e-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 25V 13A/74A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.62 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMFD1D4N02P1E onsemi

Description: MOSFET 2N-CH 25V 13A/74A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 960mW (Ta), 1W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V, Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.

Weitere Produktangebote NTMFD1D4N02P1E nach Preis ab 1.83 EUR bis 3.85 EUR

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NTMFD1D4N02P1E NTMFD1D4N02P1E Hersteller : onsemi ntmfd1d4n02p1e-d.pdf Description: MOSFET 2N-CH 25V 13A/74A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 5875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+3.21 EUR
100+2.55 EUR
500+2.16 EUR
1000+1.83 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH