NTMFD2D4N03P8 onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 3825pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 55nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 3825pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 55nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
auf Bestellung 366000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.9 EUR |
| 6000+ | 0.85 EUR |
| 9000+ | 0.81 EUR |
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Technische Details NTMFD2D4N03P8 onsemi
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 3825pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 55nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6).
Weitere Produktangebote NTMFD2D4N03P8 nach Preis ab 0.87 EUR bis 2.22 EUR
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NTMFD2D4N03P8 | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 3825pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 55nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
auf Bestellung 366000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD2D4N03P8 | Hersteller : onsemi |
 MOSFET PT8 N-CH DUAL 30V |
auf Bestellung 2880 Stücke: Lieferzeit 10-14 Tag (e) |
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