| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.06 EUR |
| 10+ | 3.39 EUR |
| 100+ | 3.19 EUR |
| 250+ | 3.08 EUR |
| 500+ | 2.98 EUR |
| 1000+ | 2.84 EUR |
| 1500+ | 2.78 EUR |
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Technische Details NTMFD4C20NT1G onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.09W, 1.15W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A, Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V, Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical).
Weitere Produktangebote NTMFD4C20NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
.JPG "NTMFD4C20NT1G") |
NTMFD4C20NT1G | onsemi |
 Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.09W, 1.15W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFD4C20NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)