NTMFD4C87NT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
| Anzahl | Preis |
|---|---|
| 130+ | 3.71 EUR |
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Technische Details NTMFD4C87NT1G onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A.
Weitere Produktangebote NTMFD4C87NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMFD4C87NT1G | onsemi |
Description: MOSFET 2N-CH 30V 11.7A 8DFN Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFD4C87NT1G | ON Semiconductor |
MOSFET NFET SO8FL 30V 26A 3.1MOH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFD4C87NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFD4C87NT1G |
|
Hersteller: ON Semiconductor
MOSFET NFET SO8FL 30V 26A 3.1MOH
MOSFET NFET SO8FL 30V 26A 3.1MOH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH