| Anzahl | Preis |
|---|---|
| 1+ | 3.84 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.56 EUR |
| 1500+ | 1.55 EUR |
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Technische Details NTMFS008N12MCT1G onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 12, Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 2.7W (Ta), 102W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS008N12MCT1G nach Preis ab 2.16 EUR bis 3.85 EUR
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NTMFS008N12MCT1G | onsemi |
 Description: SINGLE N-CHANNEL POWER MOSFET 12Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 2.7W (Ta), 102W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 696 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS008N12MCT1G |
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Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 12
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 2.7W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: SINGLE N-CHANNEL POWER MOSFET 12
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 2.7W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 696 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.85 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.16 EUR |