NTMFS016N06CT1G onsemi

Description: MOSFET N-CH 60V 10A/33A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 25µA, Power Dissipation (Max): 3.4W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).