auf Bestellung 1500 Stücke:
Lieferzeit 259-273 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.73 EUR |
| 10+ | 5.67 EUR |
| 25+ | 5.33 EUR |
| 100+ | 4.58 EUR |
| 250+ | 4.32 EUR |
| 500+ | 4.06 EUR |
| 1000+ | 3.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFS0D4N04XMT1G onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 509A (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V.
Weitere Produktangebote NTMFS0D4N04XMT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTMFS0D4N04XMT1G | Hersteller : ON Semiconductor |
 NTMFS0D4N04XMT1G |
Produkt ist nicht verfügbar |
||
 |
NTMFS0D4N04XMT1G | Hersteller : onsemi |
Description: 40V T10M IN S08FL HEFET GEN 2 PA Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 509A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V |
Produkt ist nicht verfügbar |
|
|
|
NTMFS0D4N04XMT1G | Hersteller : onsemi |
Description: 40V T10M IN S08FL HEFET GEN 2 PA Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 509A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V |
Produkt ist nicht verfügbar |