
NTMFS2D1N08XT1G onsemi

MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A
auf Bestellung 2569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.24 EUR |
10+ | 3.13 EUR |
100+ | 2.20 EUR |
500+ | 1.80 EUR |
1000+ | 1.78 EUR |
1500+ | 1.62 EUR |
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Technische Details NTMFS2D1N08XT1G onsemi
Description: T10 80V STD NCH MOSFET SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 201A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 164W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 252µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V.
Weitere Produktangebote NTMFS2D1N08XT1G nach Preis ab 2.23 EUR bis 4.96 EUR
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NTMFS2D1N08XT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS2D1N08XT1G | Hersteller : ONSEMI |
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Produkt ist nicht verfügbar |
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NTMFS2D1N08XT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
Produkt ist nicht verfügbar |