| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.46 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.61 EUR |
| 1500+ | 0.57 EUR |
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Technische Details NTMFS3D1N04XMT1G onsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 506A; 39W; DFN5, Case: DFN5, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 15.6nC, On-state resistance: 3.1mΩ, Gate-source voltage: ±20V, Power dissipation: 39W, Drain-source voltage: 40V, Drain current: 83A, Pulsed drain current: 506A.
Weitere Produktangebote NTMFS3D1N04XMT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NTMFS3D1N04XMT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 506A; 39W; DFN5 Case: DFN5 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 15.6nC On-state resistance: 3.1mΩ Gate-source voltage: ±20V Power dissipation: 39W Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 506A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTMFS3D1N04XMT1G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 506A; 39W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.6nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Power dissipation: 39W
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 506A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 506A; 39W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.6nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Power dissipation: 39W
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 506A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH