NTMFS4821NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFS4821NT1G onsemi
Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 870mW (Ta), 38.5W (Tc), Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS4821NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
NTMFS4821NT1G | Hersteller : onsemi |
MOSFET NFET SO8FL 30V TR |
auf Bestellung 7004 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMFS4821NT1G | Hersteller : ON Semiconductor |
|
auf Bestellung 716 Stücke: Lieferzeit 21-28 Tag (e) |
