Technische Details NTMFS4833NST1G ON Semiconductor
Description: MOSFET N-CH 30V 16A/156A SO-8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Power Dissipation (Max): 900mW (Ta), 86.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SO-8FL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 12 V.
Weitere Produktangebote NTMFS4833NST1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMFS4833NST1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 16A/156A SO-8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SO-8FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTMFS4833NST1G | Hersteller : onsemi | MOSFET Power MOSFET, Single, N-Channel, 30 V, 156 A, SO-8FL |
Produkt ist nicht verfügbar |