NTMFS4931NT1G-IRH1 onsemi
Hersteller: onsemiDescription: NTMFS4931 - MOSFET N CHANNEL SIN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
auf Bestellung 5197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 283+ | 1.72 EUR |
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Technische Details NTMFS4931NT1G-IRH1 onsemi
Description: NTMFS4931NT1G-IRH1, Packaging: Bulk, Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Power Dissipation (Max): 950mW (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V.
Weitere Produktangebote NTMFS4931NT1G-IRH1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMFS4931NT1G-IRH1 | Hersteller : ONSEMI |
Description: ONSEMI - NTMFS4931NT1G-IRH1 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 5197 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4931NT1G-IRH1 | Hersteller : onsemi |
Description: NTMFS4931NT1G-IRH1 Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 950mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V |
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