NTMFS4931NT1G-IRH1 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NTMFS4931NT1G-IRH1 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
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Technische Details NTMFS4931NT1G-IRH1 ONSEMI
Description: NTMFS4931 - MOSFET N CHANNEL SIN, Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Bulk.
Weitere Produktangebote NTMFS4931NT1G-IRH1 nach Preis ab 2.19 EUR bis 2.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NTMFS4931NT1G-IRH1 | onsemi |
Description: NTMFS4931 - MOSFET N CHANNEL SIN Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Bulk |
auf Bestellung 4947 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS4931NT1G-IRH1 | ON Semiconductor |
NTMFS4931NT1G-IRH1 |
auf Bestellung 4947 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFS4931NT1G-IRH1 |
|
Hersteller: onsemi
Description: NTMFS4931 - MOSFET N CHANNEL SIN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Description: NTMFS4931 - MOSFET N CHANNEL SIN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
auf Bestellung 4947 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 194+ | 2.81 EUR |
| NTMFS4931NT1G-IRH1 |
|
Hersteller: ON Semiconductor
NTMFS4931NT1G-IRH1
NTMFS4931NT1G-IRH1
auf Bestellung 4947 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 242+ | 2.73 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.19 EUR |