NTMFS4C022NT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.58 EUR |
| 3000+ | 0.38 EUR |
| 4500+ | 0.37 EUR |
| 7500+ | 0.36 EUR |
| 10500+ | 0.35 EUR |
| 15000+ | 0.34 EUR |
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Technische Details NTMFS4C022NT1G onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 64W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V.
Weitere Produktangebote NTMFS4C022NT1G nach Preis ab 0.37 EUR bis 1.37 EUR
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NTMFS4C022NT1G | Hersteller : ON Semiconductor |
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NTMFS4C022NT1G | Hersteller : ON Semiconductor |
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auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS4C022NT1G | Hersteller : onsemi |
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NTMFS4C022NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V |
auf Bestellung 21759 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C022NT1G Produktcode: 184791
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| NTMFS4C022NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 136A Pulsed drain current: 900A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 20.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1500 Stücke |
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| NTMFS4C022NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 136A; Idm: 900A; 64W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 136A Pulsed drain current: 900A Power dissipation: 64W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 20.8nC Kind of package: reel; tape Kind of channel: enhancement |
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