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NTMFS4C022NT1G

NTMFS4C022NT1G onsemi

ntmfs4c022n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
auf Bestellung 1475 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.81 EUR
12+ 2.29 EUR
100+ 1.78 EUR
500+ 1.51 EUR
Mindestbestellmenge: 10
Produktrezensionen
Produktbewertung abgeben

Technische Details NTMFS4C022NT1G onsemi

Description: MOSFET N-CH 30V 30A/136A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 64W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V.

Weitere Produktangebote NTMFS4C022NT1G nach Preis ab 1.11 EUR bis 2.83 EUR

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NTMFS4C022NT1G NTMFS4C022NT1G Hersteller : onsemi NTMFS4C022N_D-2318774.pdf MOSFET TRENCH 6 30V NCH
auf Bestellung 1830 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.83 EUR
23+ 2.31 EUR
100+ 1.79 EUR
500+ 1.52 EUR
1000+ 1.24 EUR
1500+ 1.16 EUR
3000+ 1.11 EUR
Mindestbestellmenge: 19
NTMFS4C022NT1G
Produktcode: 184791 		ntmfs4c022n-d.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
NTMFS4C022NT1G NTMFS4C022NT1G Hersteller : ON Semiconductor ntmfs4c022n-d.pdf Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) SO-FL T/R
Produkt ist nicht verfügbar
NTMFS4C022NT1G NTMFS4C022NT1G Hersteller : ON Semiconductor ntmfs4c022n-d.pdf Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
NTMFS4C022NT1G NTMFS4C022NT1G Hersteller : ON Semiconductor ntmfs4c022n-d.pdf Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
NTMFS4C022NT1G NTMFS4C022NT1G Hersteller : onsemi ntmfs4c022n-d.pdf Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Produkt ist nicht verfügbar