NTMFS4C029NAT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Technische Details NTMFS4C029NAT1G onsemi
Description: MOSFET N-CH 30V 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 750mW (Ta), 23.6W (Tc), Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).