NTMFS4C08NAT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 559+ | 1.33 EUR |
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Technische Details NTMFS4C08NAT1G onsemi
Description: MOSFET N-CH 30V 16.4A/52A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V, Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V.
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Verfügbarkeit |
Preis ohne MwSt |
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| NTMFS4C08NAT1G | Hersteller : ON Semiconductor | NFET SO8FL 30V 52A 5.8M Ohm |
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NTMFS4C08NAT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 16.4A/52A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4C08NAT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 16.4A/52A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4C08NAT1G | Hersteller : onsemi |
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