Produkte > ONSEMI > NTMFS4C08NAT1G
NTMFS4C08NAT1G

NTMFS4C08NAT1G onsemi


Hersteller: onsemi
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
559+1.07 EUR
Mindestbestellmenge: 559 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTMFS4C08NAT1G onsemi

Description: MOSFET N-CH 30V 16.4A/52A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V, Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V.

Weitere Produktangebote NTMFS4C08NAT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NTMFS4C08NAT1G NTMFS4C08NAT1G onsemi Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C08NAT1G NTMFS4C08NAT1G onsemi Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C08NAT1G NTMFS4C08NAT1G onsemi NTMFS4C08N_D-2318687.pdf MOSFET NFET SO8FL 30V 52A 5.8MOH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C08NAT1G ON Semiconductor NFET SO8FL 30V 52A 5.8M Ohm
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C08NAT1G
NTMFS4C08NAT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C08NAT1G
NTMFS4C08NAT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C08NAT1G NTMFS4C08N_D-2318687.pdf
NTMFS4C08NAT1G
Hersteller: onsemi
MOSFET NFET SO8FL 30V 52A 5.8MOH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C08NAT1G
Hersteller: ON Semiconductor
NFET SO8FL 30V 52A 5.8M Ohm
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH