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NTMFS4C10NCT1G onsemi


ntmfs4c10n-d.pdf
Hersteller: onsemi
Description: NFET SO8FL 30V 46A 6.96MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 247500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.23 EUR
3000+0.2 EUR
7500+0.19 EUR
15000+0.18 EUR
37500+0.17 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMFS4C10NCT1G onsemi

Description: NFET SO8FL 30V 46A 6.96MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc), Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V.

Weitere Produktangebote NTMFS4C10NCT1G nach Preis ab 0.2 EUR bis 1.06 EUR

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NTMFS4C10NCT1G NTMFS4C10NCT1G onsemi ntmfs4c10n-d.pdf Description: NFET SO8FL 30V 46A 6.96MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 247500 Stücke:
Lieferzeit 10-14 Tag (e)
21+1.02 EUR
33+0.64 EUR
100+0.43 EUR
500+0.31 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C10NCT1G NTMFS4C10NCT1G onsemi ntmfs4c10n-d.pdf MOSFETs NFET SO8FL 30V 46A 6.96MO
auf Bestellung 1373 Stücke:
Lieferzeit 10-14 Tag (e)
4+1.06 EUR
10+0.65 EUR
100+0.44 EUR
500+0.32 EUR
1000+0.27 EUR
1500+0.21 EUR
3000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C10NCT1G ntmfs4c10n-d.pdf
Hersteller: onsemi
Description: NFET SO8FL 30V 46A 6.96MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 247500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
33+0.64 EUR
100+0.43 EUR
500+0.31 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C10NCT1G ntmfs4c10n-d.pdf
Hersteller: onsemi
MOSFETs NFET SO8FL 30V 46A 6.96MO
auf Bestellung 1373 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.06 EUR
10+0.65 EUR
100+0.44 EUR
500+0.32 EUR
1000+0.27 EUR
1500+0.21 EUR
3000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH