NTMFS4C35NT3G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 12.4A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Technische Details NTMFS4C35NT3G onsemi
Description: MOSFET N-CH 30V 12.4A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 780mW (Ta), 33W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS4C35NT3G nach Preis ab 1.2 EUR bis 4.06 EUR
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NTMFS4C35NT3G | onsemi |
Description: MOSFET N-CH 30V 12.4A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 780mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMFS4C35NT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 12.4A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 12.4A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 2.61 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.3 EUR |
| 2000+ | 1.2 EUR |