NTMFS5832NLT1G onsemi

Description: MOSFET N-CH 40V 20A/111A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 96W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 111A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).