NTMFS5C612NT1G-TE onsemi

Description: MOSFET N-CH 60V 35A/230A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 170W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).